Low-leakage and high on/off current ratio vertical β-Ga2O3 Schottky barrier diodes induced by interface nitrogen doping

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DOI:10.1016/j.jallcom.2026.187143
作者：Mingtao Long ,?Zhonglin Sun ,?Jialong Lin ,?Zifan Hong ,?Shubo Wei ,?Yu Huang ,?Feng Zhang ,?Weifeng Yang
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：In this work, a Schottky interface optimization strategy for Ga2O3 Schottky barrier diode (SBD) via atomic nitrogen doping is demonstrated. This technique reduces the reverse leakage current

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