A comparison study of mechanical change and chemical disorder in 4H-SiC irradiated with Si5+ and He2+ at room temperature

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DOI:10.1016/j.nimb.2021.11.024
文献类型：期刊论文
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文献链接：https://doi.org/10.1016/j.nimb.2021.11.024

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Abstract：The effects of ion mass on lattice disorder of 4H-SiC irradiated with Si and He ions at room temperature to doses of 0.04 displace per atoms (dpa) to 4.0 dpa were investigated by nano-hardne

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