Selective Defect Engineering for Gate-Controlled yet Contact-Transparent Bi₂O₂Se Transistors.

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DOI:10.1021/acsnano.6c04248
作者：Huynh-Uyen-Phuong Nguyen,?Tai-Ting Lee,?Yu-Wei Chang,?Hung-Chang Hsu,?Chih-Yuan Shih,?Chi-Chun Cheng,?Luc-Phuong-Nhu Tran,?Hsin-Chien Chien,?Wen-Yuan Fei,?Wei-Yen Woon,?Yung-Chang Lin,?Kazu Suenaga,?Y
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：Two-dimensional semiconductors offer a pathway toward ultrascaled electronics, yet achieving strong electrostatic gate control without sacrificing low-resistance contacts remains a fundament

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Selective Defect Engineering for Gate-Controlled yet Contact-Transparent Bi2O2Se Transistors.

Selective Defect Engineering for Gate-Controlled yet Contact-Transparent Bi₂O₂Se Transistors.