Polarity-Dependent Band Alignment and Two-Dimensional Electron Gas Localization in β-Ga?O?/AlN Heterostructures

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DOI:10.1016/j.jallcom.2025.182985
作者：Xinlei Duan, Xiaoning Zhang, Safdar Iqbal, Linhua Liu, Jia-Yue Yang
文献类型：期刊论文
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Elsevier

Abstract：The formation of β-Ga₂O₃/AlN heterojunction electrical contacts, with AlN serving as a dielectric or barrier layer, demonstrates great potential to address the challenges of low mobility and

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