High-performance GaN HEMTs with over 2 MV cm^-1breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure.

求助中 10 由大炮冲冲冲发布于 2026/3/23 19:32:02

DOI:10.1088/1361-6528/ae46a5
作者：Wenjun Liu,?Yachao Zhang,?Zhizhe Wang,?Kai Su,?Shenglei Zhao,?Shengrui Xu,?Jinfeng Zhang,?Yixin Yao,?Baiqi Wang,?Yaolong Dong,?Yue Hao,?Jincheng Zhang
文献类型：期刊论文
补充材料：只需要正文

IOPscience

Abstract：This work demonstrates a high-performance AlGaN/GaN high-electron-mobility transistor on SiC, featuring an unintentionally doped AlN super back barrier (SBB) and an ultra-thin GaN channel. T

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High-performance GaN HEMTs with over 2 MV cm-1breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure.

High-performance GaN HEMTs with over 2 MV cm^-1breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure.