Controlling Interfacial Amidation Reaction Rate to Regulate Crystal Growth toward High-Performance FAPbBr3-Based Inverted Light-Emitting Diodes

已完结 10 由 xen 发布于 2026/3/23 13:01:15

DOI:10.1021/acsnano.4c00639
作者：Qiaopeng Cui, Dingshuo Zhang, Yun Gao, Chao Fan, Qiuting Cai, Hongjin Li, Xiaohui Wu, Meiyi Zhu, Junjie Si, Xingliang Dai*, Haiping He* and Zhizhen Ye
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：Controlling interfacial reactions is critical for zinc oxide (ZnO)-based inverted perovskite light-emitting diodes (PeLEDs), boosting the external quantum efficiency (EQE) of the near-infrar

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