Atomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review

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DOI:10.1016/j.cap.2024.05.011
作者：Se Eun Kim , Ju Young Sung , Yewon Yun, Byeongjun Jeon, Sang Mo Moon, Han Bin Lee, Chae Hyun Lee, Hae Jun Jung, Jae-Ung Lee, Sang Woon Lee
文献类型：期刊论文
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Elsevier

Abstract：Dynamic random-access memories (DRAMs) are used as core memories in current computing methods based on the Von Neumann architecture. The DRAM demand continuously increases because of the inc

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