Overcoming material limitations progresses of gallium oxide for power devices applications: A review

已完结 10 由 seraphsunkw 发布于 2025/12/12 17:07:19

DOI:10.1016/j.mattod.2025.08.007
作者：Madani Labed ,?Chowdam Venkata Prasad ,?Ho Jung Jeon ,?Kyong Jae Kim ,?Jang Hyeok Park ,?Stephen Pearton ,?You Seung Rim
文献类型：期刊论文
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Elsevier

Abstract：In recent years, gallium oxide (Ga2O3) has garnered growing attention as a next-generation ultrawide bandgap (UWBG) semiconductor, owing to its exceptional material properties namely, its wi

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