Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing

已完结 10 由张发布于 2025/12/22 18:17:41

DOI:10.1016/j.apsusc.2024.161207
作者：Qiubo Li , Shouzhi Wang , Lei Liu , Kepeng Song , Jiaoxian Yu , Guodong Wang , Jingliang Liu , Peng Cui , Siheng Chen , Defu Sun , Zhongxin Wang ,&nbs
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：As third-generation semiconductors advance, gallium nitride (GaN)-based devices are gaining significant attention. However, the processing of GaN substrates directly affects device performan

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