Modulation of interfacial Schottky barrier of In2Se3/Ti3C2X2 (X = Cl; F; O; OH) ferroelectric heterostructure

求助中 10 由杨良慧发布于 2026/1/26 17:26:38

DOI:10.1063/5.0308759
作者：Jinqi Gao, Xiangxiang Feng, Qianwei Wang, Longjun Li, Mengqiu Long, Mengqiu Cai, Biao Liu, Junliang Yang
文献类型：期刊论文
补充材料：只需要正文

American Institute of Physics (AIP)

Abstract：Reducing the interface barrier between metals and semiconductors is crucial for designing high-performance optoelectronic devices based on van der Waals heterostructures. In this study, the

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