Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors.

已完结 10 由不可二二发布于 2026/1/29 13:15:56

DOI:10.1038/s41563-025-02470-w
作者：Saifei Gou,Yuxuan Zhu,Zhejia Zhang,Menglin Huang,Jinshu Zhang,Xiangqi Dong,Mingrui Ao,Qicheng Sun,Zhenggang Cai,Yan Hu,Yufei Song,Jiahao Wang,Haojie Chen,Yuchen Tian,Xinliu He,Jieya Shang,Zhengjie Sun
文献类型：期刊论文
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Nature

Abstract：Two-dimensional semiconductors are emerging as crucial materials for the post-Moore era. However, the transition to industrial-scale applications is hindered by engineering challenges, inclu

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