Scaled crystalline antimony ohmic contacts for two-dimensional transistors

已完结 20 由 Jhcuio 发布于 2026/2/2 11:06:31

DOI:10.1038/s41928-025-01500-4
作者：Mingyi Du, Weisheng Li, Guangkai Xiong, Chunsong Zhao, Fuchen Hou, Weizhuo Gan, Xiaoshu Gong, Ningmu Zou, Lei Liu, Xilu Zou, Taotao Li, Wenjie Su
文献类型：期刊论文
补充材料：仅需补充材料

Nature

Abstract：Transition metal dichalcogenides are a potential alternative to silicon and could be used to create transistors with a contacted gate pitch below 40 nm as required by the ångström-node trans

应助信息

4小时前

9511805951Z1997

a2b5c12affe511f0a71b34735aa3bc31.pdf 已采纳

4小时前

Book学术机器人

2026/2/2 11:06:31 未找到该文献，机器人已退出，请等待人工下载

2026/2/2 11:06:31 Book学术AI机器人收到请求，开始寻找文献

2026/2/2 11:06:31 已向机器人发送请求

4小时前

Jhcuio 发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:ElsevierA lithium battery state of health estimation method based on ridge regression-support vector regression-hidden Markov model with data utilization