Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density.

已完结 20 由 Jhcuio 发布于 2026/2/2 11:27:08

DOI:10.1038/s41563-025-02452-y
作者：Junyoung Kwon,Kyoung Yeon Kim,Dongwon Jang,Min Seok Yoo,Alum Jung,Dong-Su Ko,Yoonhoo Ha,Huije Ryu,Woon Ih Choi,Yeonchoo Cho,Changhyun Kim,Eunji Yang,Eun Kyu Lee,Chang-Seok Lee,Sang Won Kim,Uihui Kwon,
文献类型：期刊论文
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Nature

Abstract：The foundry industry and academia are confronting the limits of Moore's Law scaling for logic transistors. Silicon field‑effect transistors (FETs) now rely on gate‑all‑around structures and

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