Quantum Transport Simulation and Logic Gate Application of n-Type Sub-10 nm Monolayer MoSi2N4 MOSFETs?

已完结 10 由 w 发布于 2026/1/9 23:32:33

DOI:10.1021/acsaelm.5c01786
作者：Jie Li, , , Shuo Wang, , , Xiang Li, , , Guozheng Nie, , , Zhenhua Wu, , , Yu-Qing Zhao*, , and , Yee Sin Ang*, 
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：Nowadays, silicon-based field-effect transistors (FETs) are approaching the physical limits, while two-dimensional (2D) materials have emerged as promising channel material candidates to ove

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