The Influence of Different Nanoscale Channel Lengths in Low-Temperature-Grown Lateral MoS2 Memristors

已完结 10 由 w 发布于 2026/1/9 23:30:58

DOI:10.1021/acsami.5c21337
作者：Danyun Wang, , , Daquan Yu, , , Hongyu Chen, , , Caiyuan Zhao, , , Xinyi Chen*, , and , Miao Lu*, 
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：The memristor based on low-temperature growth of molybdenum disulfide (MoS2) is expected to integrate with current IC processes and become one of the fundamental devices for brainlike artifi

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