Theoretical study of sub-5nm monolayer LiAlO2 field-effect transistor: Effects of underlap structure and high temperature

已完结 10 由 w 发布于 2026/1/9 16:09:37

DOI:10.1016/j.vacuum.2025.115028
作者：Yi Xiang , Le-Jun Wang , Hong-Lin Ma , Lei Hu , Zhi-Qiang Fan , Chun-Ming Yang
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：As sub-5nm silicon metal-oxide-semiconductor field effect transistors (MOSFETs) encounter severe short-channel effects (SCEs), two-dimensional (2D) semiconductors become promising channel ma

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