High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

已完结 10 由 zhw 发布于 2026/7/24 9:07:39

DOI:10.1109/LED.2022.3173593
作者：Hang Xu;Yafen Yang;Jingjing Tan;Lin Chen;Hao Zhu;Qingqing Sun
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：In this work, a silicon-on-insulator (SOI)-based lateral avalanche photodiode (APD) is proposed and fabricated. The device features lateral separate-absorption-multiplication (SAM) and elect

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