Voltage-controlled magnetic anisotropy in Pt/Fe/MgO and 2D dielectric LaOBr-capped Pt/Fe/MgO heterostructures

已完结 20 由流星雨发布于 2025/10/27 9:19:48

DOI:10.1063/5.0281436
作者：Xinzhuo Zhang, Shiming Yan, Wen Qiao, Ru Bai, Tiejun Zhou
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：Low power consumption and fast response enabled by voltage control are core advantages of field-effect transistors. Similarly, in magnetoelectric random access memory (MeRAM), voltage-contro

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