Electronic properties and interfacial engineering of metal–semiconductor 1T-, 2H-Ta2B MBene/Janus MoSSe heterostructures?

已完结 10 由杨良慧发布于 2025/12/5 18:46:01

DOI:10.1039/D5NR01589H
作者：Pham T. Truong, Nguyen N. Hieu, Hieu V. Nguyen, Cuong Q. Nguyen, Tran P. T. Linh, Huynh V. Phuc and Chuong V. Nguyen
文献类型：期刊论文
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Royal Society of Chemistry (RSC)

Abstract：Metal–semiconductor heterostructures are pivotal in modern electronics, offering a crucial interface that governs carrier transport and significantly impacts device performance and functiona

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