Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors

已完结 10 由 seraphsunkw 发布于 2025/11/18 17:38:36

DOI:10.1021/acsami.5c13149
作者：Husam Walwil, , , Mohamadali Malakoutian, , , Daniel C. Shoemaker, , , Kelly Woo, , , Rohith Soman, , , Junrui Lyu, , , Eduardo M. Chumbes,&
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：AlGaN/GaN high electron mobility transistors (HEMTs) are critical components in modern radio frequency (RF) power amplifiers. However, commercial AlGaN/GaN HEMTs often require power derating

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