Characterization FinFET device layout dependent effect

已完结 20 由 ewfc 发布于 2025/8/7 20:54:02

DOI:10.1109/CSTIC.2016.7463907
作者：Xinyun Xie, J. Ju
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：Layout-dependent effects (LDE) have been extensively studied previously on planar device, but the understanding on FinFET devices is limited. In this work, Fin number effect, contact to gate

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