Photosensitive resistive switching in parylene–PbTe nanocomposite memristors for neuromorphic computing?

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DOI:10.1039/D5NR00456J
作者：Andrey D. Trofimov, Andrey V. Emelyanov, Anna N. Matsukatova, Alexander A. Nesmelov, Sergey A. Zavyalov, Timofey D. Patsaev, Pavel A. Forsh, Gang Liu, Vladimir V. Rylkov and Vyacheslav A. Demin
文献类型：期刊论文
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Royal Society of Chemistry (RSC)

Abstract：Resistive switching (RS) memory devices with incorporated capabilities of in situ data sensing, storing and processing are promising for artificial intelligence applications. In this respect

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