Interfacial defect engineering to boost deep-ultraviolet photodetection based on a wide-bandgap semiconductor heterostructure?

已完结 10 由 long 发布于 2025/8/10 20:23:06

DOI:10.1039/D5QI00691K
作者：Han Wu, Lincong Shu, Sihan Yan, Shulin Sha, Qinghua Zhang, Zeng Liu, Shan Li, Weihua Tang, Yuehui Wang, Jiaying Shen, Zhenping Wu, Kun Lin, Qiang Li, Jun Miao and Xianran Xing
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1039/D5QI00691K

Royal Society of Chemistry (RSC)

Abstract：Although wide-bandgap semiconductors have emerged as a valuable class of deep-ultraviolet-sensitive materials, showing great potential for next-generation integrated devices, achieving high-

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