Stacking stability of MoS2 bilayer: An ab initio study

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DOI:10.1088/1674-1056/23/10/106801
文献类型：期刊论文
补充材料：仅需补充材料
文献链接：https://doi.org/10.1088/1674-1056/23/10/106801

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Abstract：The study of the stacking stability of bilayer MoS2 is essential since a bilayer has exhibited advantages over single layer MoS2 in many aspects for nanoelectronic applications. We explored

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