A review of failure modes and mechanisms of GaN-based HEMTs

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DOI:10.1109/IEDM.2007.4418952
作者：E. Zanoni, G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, F. Zanon
文献类型：期刊论文
补充材料：只需要正文

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：Failure modes and mechanisms of AlGaN/GaN HEMTs, observed during accelerated tests at various bias conditions are reviewed.

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