Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles

已完结 10 由居鸭发布于 2025/9/16 18:48:38

DOI:10.1116/6.0002290
作者：F. Krüger, Hyun-Yong Lee, S. Nam, M. Kushner
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and a

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