Effect of NF3, WF6, and MoF6 Additive Gases on High Aspect Ratio Contact SiO2 Etching in c-C4F8/C4F6/Ar/O2 Plasmas

已完结 20 由居鸭发布于 2025/9/18 17:16:08

DOI:10.1021/acsaelm.4c0223910.1021/acsaelm.4c02239
作者：Hyun Woo Tak,?Chan Hyuk Choi,?Seong Bae Kim,?Myeong Ho Park,?Jun Soo Lee,?Akihide Sato,?Bong Sun Kim,?Jun Ki Jang,?Eun Koo Kim,?Dong Woo Kim* and Geun Young Yeom*,?
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Abstract：Etch profile control of high aspect ratio contact (HARC) is one of the key issues in developing next-generation memory device manufacturing because the HARC etch result can determine the dev

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