Atomic layer etching in HBr/He/Ar/O2 plasmas

已完结 20 由 hhh 发布于 2025/8/20 18:08:47

DOI:10.1116/6.0003593
作者：Qinzhen Hao, M. A. I. Elgarhy, Pilbum Kim, Sang Ki Nam, Song-Yun Kang, Vincent M. Donnelly
文献类型：期刊论文
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American Institute of Physics (AIP)

Abstract：Atomic layer etching of Si is reported in a radio frequency (RF) pulsed-power inductively coupled (ICP) plasma, with periodic injections of HBr into a continuous He/Ar carrier gas flow, some

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