Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors

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DOI:10.1016/j.pquantelec.2025.100578
作者：Ho-Young Kim ,?Ray-Hua Horng ,?Hiroshi Amano ,?Tae-Yeon Seong
文献类型：期刊论文
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Elsevier

Abstract：AlGaN/GaN-based high electron mobility transistors (HEMTs) hold significant technological importance due to their applications in power electronics, radio frequency (RF) amplifiers, and micr

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