Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma Source

已完结 20 由居鸭发布于 2025/8/31 14:39:33

DOI:10.1021/acsami.3c02950
作者：You Jin Ji, Hae In Kim, Seung Yup Choi, Ji Eun Kang, Albert Rogers Ellingboe, Haripin Chandra, Chang-Won Lee and Geun Young Yeom*, 
文献类型：期刊论文
补充材料：只需要正文

其它数据库

Abstract：Plasma enhanced atomic layer deposition (PEALD) of silicon nitride (SiNx) using very high frequency (VHF, 162 MHz) plasma source was investigated at the process temperatures of 100, 200, and

应助信息

求助已完结，文件已删除 如有需求请重新发布求助一键发布

感谢使用Book学术
本站所有文献仅供个人学习和参考，请勿将文件进行传播。共同遵守网站规定和相关知识产权规定。

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:NatureCold acclimation with shivering improves metabolic health in adults with overweight or obesity