4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

已完结 10 由 remyhin 发布于 2025/9/6 1:24:25

DOI:10.1088/1674-4926/25010005
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://iopscience.iop.org/article/10.1088/1674-4926/25010005

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