Dislocation characterization of GaN layers in high-performance, High-Electron-Mobility Transistor structures grown on on-axis and off-axis 4H-SiC(0001) substrates

DOI:10.1016/j.mssp.2025.109395
作者：Seung Min Lee ,?Woon Jae Ruh ,?Hyun Jin Choi ,?Da Mi Kwon ,?Eun Ah Cheon ,?Minhyuk Choi ,?Young-Kyun Noh ,?Mino Yang ,?Seungwoo Song ,?Young Heon Kim
文献类型：期刊论文
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