Application of Atomic Layer Deposition Tungsten (ALD W) as gate filling metal for 22 nm and beyond nodes CMOS technology

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DOI:10.1149/ma2013-02/24/1890
作者：王桂磊, 徐强, 杨涛
文献类型：期刊论文
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IOPscience

Abstract：By using two different precursors i.e. SiH4 and B2H6, atomic layer deposition (ALD) Tungsten (W) as gate filling metal for 22 nm and beyond nodes CMOS technology were investigated in this wo

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