Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition

已完结 10 由点滴发布于 2026/7/8 23:31:02

DOI:10.1016/S0039-6028(01)00969-4
作者：J.W Elam, C.E Nelson, R.K Grubbs, S.M George
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：The atomic layer deposition (ALD) of tungsten (W) films has been demonstrated using alternating exposures to tungsten hexafluoride (WF6) and disilane (Si2H6). The present investigation explo

应助信息

4小时前

hxie

1238124b7b2411f1ad7134735aa3bc31.pdf 已采纳

12小时前

Book学术机器人

2026/7/8 23:31:02 未找到该文献，机器人已退出，请等待人工下载

2026/7/8 23:31:02 Book学术AI机器人收到请求，开始寻找文献

2026/7/8 23:31:02 已向机器人发送请求

12小时前

点滴发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:其它数据库Mechanisms and therapeutic implications of glioma-neuron interactions