The effects of CF4 plasma treatment on the performance, gate bias stability, and defect characteristics of low-temperature indium-gallium-tin-oxide thin-film transistors

已完结 20 由 dcr 发布于 2025/4/5 11:49:32

DOI:10.1016/j.mssp.2025.109381
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1016/j.mssp.2025.109381

Elsevier

Abstract：CF4 plasma treatment, widely recognized for its use in etching processes, has emerged as an effective doping method for amorphous oxide semiconductor (AOS) based thin-film transistors (TFTs)

应助信息

求助已完结，文件已删除 如有需求请重新发布求助一键发布

感谢使用Book学术
本站所有文献仅供个人学习和参考，请勿将文件进行传播。共同遵守网站规定和相关知识产权规定。

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:American Chemical Society (ACS)Ion-Anchored Strategy for MnO2/Mn2+ Chemistry without “Dead Mn” and Corrosion