Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Base Power Device Applications.

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DOI:10.1021/acsnano.4c16458
作者：Madani Labed, Bo-In Park, Jekyung Kim, Jang Hyeok Park, Jihua Min, Ho Jung Jeon, Jeehwan Kim, You Seung Rim
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：The quality of the metal contact of devices can be significantly improved through high-temperature annealing, which enhances the crystal structure and reduces contamination. However, high-te

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