The excellent performance of β-Ga2O3 Schottky photodiode under forward bias and its application in solar-blind ultraviolet communication

已完结 10 由 hhjj 发布于 2026/7/10 9:38:16

DOI:10.1016/j.mtphys.2023.101032
作者：Yiyin Nie , Shujie Jiao , Song Yang , Jiangcheng Jing , Shubo Zhang , Zehao Shi , Hongliang Lu , Dongbo Wang , Shiyong Gao , Xianghu Wang , Yunxiao Zh
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：In this work, the planar β-Ga2O3 Schottky photodiodes on the sapphire substrates were manufactured by conventional photolithography and lift-off processes. Au and Ti/Au were used as Schottky

应助信息

求助已完结，文件已删除 如有需求请重新发布求助一键发布

感谢使用Book学术
本站所有文献仅供个人学习和参考，请勿将文件进行传播。共同遵守网站规定和相关知识产权规定。

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:其它数据库Root Cause Analysis of Tungsten-Induced Protein Aggregation in Pre-filled Syringes.