Production of EUV mask blanks with low killer defects

已完结 10 由 dzz 发布于 2025/5/26 15:15:29

DOI:10.1117/12.2048541
作者：A. Antohe, P. Kearney, M. Godwin, Long He, Arun John Kadaksham, F. Goodwin, A. Weaver, A. Hayes, Steve Trigg
文献类型：期刊论文
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International Society for Optics and Photonics (SPIE)

Abstract：For full commercialization, extreme ultraviolet lithography (EUVL) technology requires the availability of EUV mask blanks that are free of defects. This remains one of the main impediments

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