Exploring oxide-nitride-oxide scalloping behavior with small gap structure and chemical analysis after fluorocarbon or hydrofluorocarbon plasma processing

已完结 10 由居鸭发布于 2025/6/3 13:57:57

DOI:10.1116/6.0002868
作者：Sang-Jin Chung, Pingshan Luan, Minjoon Park, Andrew Metz, Gottlieb S. Oehrlein
文献类型：期刊论文
补充材料：只需要正文

American Institute of Physics (AIP)

Abstract：The scalloping of oxide-nitride-oxide (ONO) stacked layers on vertical sidewalls during high-aspect-ratio contact etch is commonly seen and characterized by the horizontal etching of oxide a

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