Corrigendum to: Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE [Journal Title: Physica B: Condensed Matter, Volume 685, 15 July 2024, 415962 https://www.sciencedirect.com/science/article/abs/pii/S092145262400303X?via%3Dihub]

DOI:10.1016/j.physb.2024.416081
作者：Maha A. Alenizi , Mansour Aouassa , Mohammed Bouabdellaoui , K.M.A. Saron , A.K. Aladim , Mohammed Ibrahim , Isabelle Berbezier
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1016/j.physb.2024.416081