Role of charge doping and strain in the stabilization of in-plane ferromagnetism in monolayer VSe2 at room temperature

已完结 10 由芽发布于 2024/12/11 15:05:07

DOI:10.1088/2053-1583/abf626
作者：S. Memarzadeh,?M. R. Roknabadi,?M. Modarresi,?A. Mogulkoc,?A. Rudenko
文献类型：期刊论文
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IOPscience

Abstract：We study the origin of in-plane ferromagnetism in monolayer VSe2 focusing on the effect of charge doping and mechanical strain. We start from an anisotropic spin Hamiltonian, estimate its pa

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