Vertical Channel Transistor (VCT) as Access Transistor for Future 4F2 DRAM Architecture

已完结 10 由刘发布于 2024/12/20 10:25:42

DOI:10.1109/IMW56887.2023.10145977
作者：Daohuan Feng, Yi Jiang, Yunsong Qiu, Yuhong Zheng, Harry Kim, Jaewoo Kim, Jian Chu, Guangsu Shao, Yucheng Liao, Cheng-Jer Yang, Minrui Hu, Wenli Zhao, Linjiang Xia, Jianfeng Xiao, Di Ma, Yuan Cheng, X
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：In this work, a novel 4F2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of $\mathbf{4 F}^{2}$

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