Peculiarities of selective isotropic Si etch to SiGe for nanowire and GAA transistors

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DOI:10.1117/12.2514566
作者：C. Catano, Nicholas A. Joy, Christopher Talone, Shyam Sridhar, S. Voronin, P. Biolsi, A. Ranjan
文献类型：期刊论文
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International Society for Optics and Photonics (SPIE)

Abstract：Within the world of integrated circuit manufacturing there is a continuous effort to increase device density in order to improve speed, performance and costs. Current technology is driving a

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