Device simulation of layer dependence on 10-nm-gate MoS2 transistors

已完结 10 由 w 发布于 2026/7/16 10:18:43

DOI:10.1039/D6CP00545D
作者：Hong Li, Tianshuo Duan, Xiaotian Hu, Lina Si, Fengbin Liu and Jing Lu
文献类型：期刊论文
补充材料：只需要正文

Royal Society of Chemistry (RSC)

Abstract：The layer-dependent performance of two-dimensional transistors is a compelling subject that has not been extensively investigated. In this study, we systematically examine the layer dependen

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