Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure

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DOI:10.1016/j.jallcom.2022.168327
作者：Sungjoo Song , Seung-Hwan Kim , Seung-Geun Kim , Kyu-Hyun Han , Hyung-jun Kim , Hyun-Yong Yu
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：The contact resistance at the metal-semiconductor (MS) interface has become the foremost challenge to ensuring high performance in nanoelectronics as devices are scaled down. A metal-interla

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