A combined AIMD and DFT study of the low-energy radiation responses of GaN?

已完结 10 由 hcc 发布于 2025/3/12 8:52:00

DOI:10.1039/D4CP00426D
作者：Ming Jiang, Nuo Cheng, Xin-Yu Zhu, Xuan-Liang Hu, Zi-Han Wang, Ning Liu, Shuo Song, Sheng-Ze Wang, Xu-Sheng Liu and Chandra Veer Singh
文献类型：期刊论文
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Royal Society of Chemistry (RSC)

Abstract：Although GaN is a promising candidate for semiconductor devices, degradation of GaN-based device performance may occur when the device is bombarded by high-energy charged particles during it

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