Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

已完结 10 由 forwardsun 发布于 2025/2/11 17:14:59

DOI:10.1063/5.0242551
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1063/5.0242551

American Institute of Physics (AIP)

Abstract：To develop low-power, miniature, nonvolatile memory resistor integrated devices for in-memory computing technologies, the exploration of atomic-scale ferroelectric channel semiconductor devi

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