Analysis of Retention Failure by Bulk Trap in DRAM

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DOI:10.31399/asm.cp.istfa2022p0362
作者：D.H. Han, Hoonchang Yang, Jinyeong Hwang, Jinseon Kim, K. Cho, Incheol Nam, D. Kim, Beomseop Lee, Sungsoo Yim, Hee-Il Hong, Jooyoung Lee
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Abstract： DRAM is a type of memory that stores each bit of data in a capacitor cell, leakage current is a very important electrical parameter to retain data. Therefore, larger cell capacitance and s

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