Study of time dependent 193 nm reticle haze

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DOI:10.1117/12.747145
作者：J. Gordon, L. Frisa, Christian Chovino, David Chan, J. Keagy, Colleen Weins
文献类型：期刊论文
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International Society for Optics and Photonics (SPIE)

Abstract：While significant progress has been made in reducing the occurrence rate of progressive defect growth on photomasks used at 193nm, the issue continues to be a problem for many semiconductor

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