Oxidation behavior of SiC in dissociated oxygen environments

已完结 10 由 Aug. 发布于 2026/4/24 15:18:06

DOI:10.1016/j.actamat.2025.120745
作者：Zuozheng Chen ,?Liping Liu ,?Jian Guo ,?Chenran Li ,?Jia Yu ,?Yan Yin ,?Shanggeng Li ,?Ke Ren ,?Min Yi ,?Guolin Wang ,?Yiguang Wang
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：Dissociated oxygen environments are typically encountered during the hyper-speed flight of vehicles. Silicon carbide (SiC) is a typical material used in the thermal protection systems of hyp

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